Atomic Layer Epitaxial Growth of Gaas on Porous Silicon Substrate

Abstract

GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD) for different growth temperatures using atomic layer epitaxy (ALE) technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM). The effect of growth temperature is studied using photoluminescence measurements (PL).The photoluminescence spectra revealed a dissymmetry form toward high energies attributed to strain effect resulting from the lattice mismatch between GaAs and porous Si substrate.