TY  - JOUR
AU  - Lajnef, Mohamed 
AU  - Bardaoui, Afrah 
AU  - Sagne, Isabelle 
AU  - Chtourou, Radwan 
AU  - Ezzaouia, Hatem 
PY  - 2008
TI  - Atomic Layer Epitaxial Growth of Gaas on Porous Silicon Substrate
JF  - American Journal of Applied Sciences
VL  - 5
IS  - 5
DO  - 10.3844/ajassp.2008.605.609
UR  - https://thescipub.com/abstract/ajassp.2008.605.609
AB  - GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD) for different growth temperatures using atomic layer epitaxy (ALE) technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM). The effect of growth temperature is studied using photoluminescence measurements (PL).The photoluminescence spectra revealed a dissymmetry form toward high energies attributed to strain effect resulting from the lattice mismatch between GaAs and porous Si substrate.