Design of a Current Sensor for IDDQ Testing of CMOS IC
- 1 Department of Electrical and Electronic Engineering, Faculty of Engineering, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor, Malaysia
Abstract
This study presents the design of an off-chip current sensor for IDDQ testing of CMOS (Complementary Metal-oxide Semiconductor) ICs (integrated circuit). It provides a linear voltage signal of IDDQ current with a conversion factor of 5 mV/μA without any amplification. A voltage-controlled switch is used to bypass the transient current peaks. It has also been shown that the sensor is capable of detecting IDDQ faults of a circuit at 100 kHz test frequency without degrading its performance.
DOI: https://doi.org/10.3844/ajassp.2005.682.687
Copyright: © 2005 Mohd Liakot Ali and Nurul Huda Khamis. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
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Keywords
- IDDQ Testing
- CMOS IC
- Current Sensor