Study of Au/n-Ti2S/p-Si/Al Schottky-Type Thin Film Heterojunction Solar Cells: Computer Simulation Modeling
DOI : 10.3844/ajassp.2015.262.271
American Journal of Applied Sciences
Volume 12, Issue 4
The Au/n-Ti2S/p-Si/Al heterojunction with intrinsic thin-layer solar cells were analyzed by AFORS-HET software program. Thickness of the emitter intrinsic layer and the interface state density of such cells were studied. In which, the intrinsic layer inserted between the Ti2S and crystalline p-type silicon substrate, reduce the interface state density. The thinner intrinsic layer is better than thicker one, when the interface state density is lower than 1010 cm-2.V-1. As the thickness of the emitter increased, both short-current density (J) and the conversion efficiency were decreased. The dependence of J-V characteristics of the Au/n-Ti2S/p-Si/Al heterojunction solar cell on Front and back Surface Recombination Velocity (SRV) was studied. By optimizing the initial parameters set, the Au/n-Ti2S/p-Si/Al solar cell reaches a high efficiency (Î·) up to 21.849% (FF: 0.834, Voc: 0.666 V, Jsc: 39.39 mA/cm2).
© 2015 Ali Ibrahim. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.