@article {10.3844/ajassp.2015.262.271,
article_type = {journal},
title = {Study of Au/n-Ti2S/p-Si/Al Schottky-Type Thin Film Heterojunction Solar Cells: Computer Simulation Modeling},
author = {Ibrahim, Ali},
volume = {12},
year = {2015},
month = {Jun},
pages = {262-271},
doi = {10.3844/ajassp.2015.262.271},
url = {https://thescipub.com/abstract/ajassp.2015.262.271},
abstract = {The Au/n-Ti2S/p-Si/Al heterojunction with intrinsic thin-layer solar cells were analyzed by AFORS-HET software program. Thickness of the emitter intrinsic layer and the interface state density of such cells were studied. In which, the intrinsic layer inserted between the Ti2S and crystalline p-type silicon substrate, reduce the interface state density. The thinner intrinsic layer is better than thicker one, when the interface state density is lower than 1010 cm-2.V-1. As the thickness of the emitter increased, both short-current density (J) and the conversion efficiency were decreased. The dependence of J-V characteristics of the Au/n-Ti2S/p-Si/Al heterojunction solar cell on Front and back Surface Recombination Velocity (SRV) was studied. By optimizing the initial parameters set, the Au/n-Ti2S/p-Si/Al solar cell reaches a high efficiency (η) up to 21.849% (FF: 0.834, Voc: 0.666 V, Jsc: 39.39 mA/cm2).},
journal = {American Journal of Applied Sciences},
publisher = {Science Publications}
}