Research Article Open Access

Atomic Layer Epitaxial Growth of Gaas on Porous Silicon Substrate

Mohamed Lajnef1, Afrah Bardaoui1, Isabelle Sagne1, Radwan Chtourou1 and Hatem Ezzaouia1
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Abstract

GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD) for different growth temperatures using atomic layer epitaxy (ALE) technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM). The effect of growth temperature is studied using photoluminescence measurements (PL).The photoluminescence spectra revealed a dissymmetry form toward high energies attributed to strain effect resulting from the lattice mismatch between GaAs and porous Si substrate.

American Journal of Applied Sciences
Volume 5 No. 5, 2008, 605-609

DOI: https://doi.org/10.3844/ajassp.2008.605.609

Submitted On: 27 March 2007 Published On: 31 May 2008

How to Cite: Lajnef, M., Bardaoui, A., Sagne, I., Chtourou, R. & Ezzaouia, H. (2008). Atomic Layer Epitaxial Growth of Gaas on Porous Silicon Substrate. American Journal of Applied Sciences, 5(5), 605-609. https://doi.org/10.3844/ajassp.2008.605.609

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Keywords

  • GaAs
  • ALE technique
  • porous silicon
  • photoluminescence