Design of a Current Sensor for IDDQ Testing of CMOS IC
Mohd L. Ali and Nurul H. Khamis
DOI : 10.3844/ajassp.2005.682.687
American Journal of Applied Sciences
Volume 2, Issue 3
This study presents the design of an off-chip current sensor for IDDQ testing of CMOS (Complementary Metal-oxide Semiconductor) ICs (integrated circuit). It provides a linear voltage signal of IDDQ current with a conversion factor of 5 mV/μA without any amplification. A voltage-controlled switch is used to bypass the transient current peaks. It has also been shown that the sensor is capable of detecting IDDQ faults of a circuit at 100 kHz test frequency without degrading its performance.
© 2005 Mohd L. Ali and Nurul H. Khamis. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.