Research Article Open Access

Design and Simulation of Novel Gated Integrator for the Heavy ion Beam Monitors System

Djamet Yimga Arnaud1, Wembe Tafo Evariste2 and Essimbi Zobo Bernard1
  • 1 University of Yaoundé I, Cameroon
  • 2 University of Douala, Cameroon
American Journal of Engineering and Applied Sciences
Volume 10 No. 1, 2017, 134-141

DOI: https://doi.org/10.3844/ajeassp.2017.134.141

Submitted On: 12 February 2017 Published On: 27 February 2017

How to Cite: Arnaud, D. Y., Evariste, W. T. & Bernard, E. Z. (2017). Design and Simulation of Novel Gated Integrator for the Heavy ion Beam Monitors System. American Journal of Engineering and Applied Sciences, 10(1), 134-141. https://doi.org/10.3844/ajeassp.2017.134.141

Abstract

In this study, the objective is to realize a Gated Integrator (GI) circuit for silicon strip, Si(Li), CdZnTe and CsI detectors etc. With the development of radioactive ion beam physics, heavy-charged particles like carbon ions have been applied to the treatment of deep-seated inoperable tumors in the therapy terminal of the Heavy ion Research Facility in Lanzhou (HIRFL) located at the Institute of Modern Physics (IMP), Chinese Academy of Sciences (CAS). A high resolution current measurement circuit was developed to monitor the beam current at 1pA range. The circuit consisted of a low current high sensitivity I/V converter and gated integrator in an energy spectroscopy. A low offset voltage precision amplifier and new guarding and shielding techniques were used in the I/V converter circuit which allowed to measure low current. This paper will show a MOS switch configuration which is used to prevent leakage current and novel technique to compensate a charge injection in the reset switch.

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Keywords

  • Energy Spectroscopy
  • Noise
  • Gated Integrator
  • Charge Injection
  • Leakage Current Prevention