@article {10.3844/ajeassp.2017.134.141,
article_type = {journal},
title = {Design and Simulation of Novel Gated Integrator for the Heavy ion Beam Monitors System},
author = {Arnaud, Djamet Yimga and Evariste, Wembe Tafo and Bernard, Essimbi Zobo},
volume = {10},
number = {1},
year = {2017},
month = {Feb},
pages = {134-141},
doi = {10.3844/ajeassp.2017.134.141},
url = {https://thescipub.com/abstract/ajeassp.2017.134.141},
abstract = {In this study, the objective is to realize a Gated Integrator (GI) circuit for silicon strip, Si(Li), CdZnTe and CsI detectors etc. With the development of radioactive ion beam physics, heavy-charged particles like carbon ions have been applied to the treatment of deep-seated inoperable tumors in the therapy terminal of the Heavy ion Research Facility in Lanzhou (HIRFL) located at the Institute of Modern Physics (IMP), Chinese Academy of Sciences (CAS). A high resolution current measurement circuit was developed to monitor the beam current at 1pA range. The circuit consisted of a low current high sensitivity I/V converter and gated integrator in an energy spectroscopy. A low offset voltage precision amplifier and new guarding and shielding techniques were used in the I/V converter circuit which allowed to measure low current. This paper will show a MOS switch configuration which is used to prevent leakage current and novel technique to compensate a charge injection in the reset switch.},
journal = {American Journal of Engineering and Applied Sciences},
publisher = {Science Publications}
}