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ISSN: 1546-9239 (Print)
ISSN: 1554-3641 (Online)
Research Article Open Access

Displacement of Boron from the Silicon Crystal Nodes by Interstitial Si Atoms During Implantation and Annealing

M. Jadan1, A. R. Chelyadinskii2 and V. Y. Yavid2
  • 1 Tafila Applied University College, AL-Balqa, Applied University, Jordan
  • 2 Belarusian State University, Minsk, Belarus

Abstract

The process of boron displacement from the nodes into interstitial positions of interstitial Si atoms in silicon (Watkins effect) on the conditions of implantation and annealing has been investigated with the help of X-ray diffraction and electrical methods. It was revealed that the efficiency of the Watkins substitution is determined by the ion current density (level of ionization). With increasing of the ionization level in the implanted layer during implantation or annealing (additional low-energy electron irradiation) the replacement process may be suppressed

American Journal of Applied Sciences
Volume 2 No. 5, 2005, 910-913

DOI: https://doi.org/10.3844/ajassp.2005.910.913

Submitted On: 8 February 2005 Published On: 31 May 2005

How to Cite: Jadan, M., Chelyadinskii, A. R. & Yavid, V. Y. (2005). Displacement of Boron from the Silicon Crystal Nodes by Interstitial Si Atoms During Implantation and Annealing. American Journal of Applied Sciences, 2(5), 910-913. https://doi.org/10.3844/ajassp.2005.910.913

Open AccessCopyright: © 2005 M. Jadan, A. R. Chelyadinskii and V. Y. Yavid. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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Keywords

  • silicon
  • Ion Implantation
  • Radiation Defects
  • Watkins Substitution