AJAS Cover
Frequency: Continuous
ISSN: 1546-9239 (Print)
ISSN: 1554-3641 (Online)
Research Article Open Access

Residual Defects in Silicon Implanted with Boron and Phosphorous Ions

M. Jadan1
  • 1 Department of Basic Sciences, Tafila Applied University College Al-Balqa, Applied University, P.O. Box 40, AL-Eys_66141, Tafila, Jordan

Abstract

Accumulation of radiation defects in Si implanted with B+ or P+ ions, and formation of the residual extended defects (dislocation loops, rod-like defects) in the process of successive thermal treatment have been studied. The anomalies observed in the formation of the extended defects are associated with the elastic stresses in the damaged regions affecting the process of radiation defects clustering.

American Journal of Applied Sciences
Volume 2 No. 4, 2005, 877-880

DOI: https://doi.org/10.3844/ajassp.2005.877.880

Submitted On: 31 January 2005 Published On: 30 April 2005

How to Cite: Jadan, M. (2005). Residual Defects in Silicon Implanted with Boron and Phosphorous Ions. American Journal of Applied Sciences, 2(4), 877-880. https://doi.org/10.3844/ajassp.2005.877.880

Open AccessCopyright: © 2005 M. Jadan. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

  • 3,020 Views
  • 2,143 Downloads
  • 0 Citations

Download

Keywords

  • Accumulation of radiation defects
  • residual
  • dislocation loops