Research Article Open Access

Properties of ZnO:Ga Thin Films Deposited by dc Magnetron Sputtering: Influence of Ga-Doped Concentrations on Structural and Optical Properties

Putut Marwoto1, Edy Wibowo2, Dwi Suprayogi1, Sulhadi Sulhadi1, Didik Aryanto3 and Sugianto Sugianto1
  • 1 Universitas Negeri Semarang (Unnes), Indonesia
  • 2 Telkom University, Indonesia
  • 3 Indonesia Academy of Science, Indonesia
American Journal of Applied Sciences
Volume 13 No. 12, 2016, 1394-1399

DOI: https://doi.org/10.3844/ajassp.2016.1394.1399

Published On: 14 December 2016

How to Cite: Marwoto, P., Wibowo, E., Suprayogi, D., Sulhadi, S., Aryanto, D. & Sugianto, S. (2016). Properties of ZnO:Ga Thin Films Deposited by dc Magnetron Sputtering: Influence of Ga-Doped Concentrations on Structural and Optical Properties. American Journal of Applied Sciences, 13(12), 1394-1399. https://doi.org/10.3844/ajassp.2016.1394.1399

Abstract

ZnO:Ga thin films were deposited on corning glass by dc magnetron sputtering. Influence of Ga-doped concentrations on the structural and optical properties of ZnO:Ga thin films were investigated. The XRD patterns show that the crystallinity of deposited films improved with the increase of Ga concentrations from 1 to 2%, then decrease at 3% Ga concentrations. The optical transmittance of films with 1% and 2% Ga concentration reach 85% in the visible range, while at 3% Ga concentration the transmittance of film only 70%. We observed that the band gap of film change due to the addition of Ga dopant. The band gap of the films are 3.27, 3.28 and 3.21 eV for 1, 2 and 3% Ga-doped concentrations, respectively.

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Keywords

  • ZnO:Ga Thin Films
  • DC Magnetron Sputtering
  • Structural
  • Optical Properties