Modeling of Signal Generation Function and Electron Penetration Effects on the EBIC Signal of Schottky diodes of Ge
Beggah Yamina and Lahreche Abderezzek
DOI : 10.3844/ajassp.2008.678.682
American Journal of Applied Sciences
Volume 5, Issue 6
The present study shows that simple forms for the generation functions, if connected to appropriate electronic path (electron range), can be successfully used to describe the collection efficiency in EBIC devices. Both uniform and point-like source generation functions are considered here and for which two phenomenological electronic paths, depending on the incident beam energy, are obtained. Complexities that might arise solving the continuity equations are, thus, avoided. The calculations were performed for the Schottky diodes Au/Ge.
© 2008 Beggah Yamina and Lahreche Abderezzek. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.