Localization of Implanted Impurities in Silicon
M. Jadan and Jihad S.M. Addasi
DOI : 10.3844/ajassp.2005.857.859
American Journal of Applied Sciences
Volume 2, Issue 4
Localization of implanted boron impurities at the nodes and interstitial of silicon depending on the implantation current density has been studied by the X-ray diffraction and astrophysical methods. A shares of the impurity at the lattice sites increases with growing current density due to the instantaneous vacancy concentration and suppression of the impurity displacement from the sites by silicon interstitial.
© 2005 M. Jadan and Jihad S.M. Addasi. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.