Thermal-Mechanical Analysis of a Different Leadframe Thickness of Semiconductor Package under the Reflow Process
The copper-based leadframe is practically proven effective in the thermal and reliability of a Quad Flat No Lead (QFN) three dimension (3D) stacked-die semiconductor package. Reducing the copper thickness is understood to present various thermal and reliability failure mode and mechanisms, such as die cracking and delamination. However, no in-depth study has been pursued in order to determine the capability of achieving the product requirements in terms of thermal and reliability in a 3D stacked-die package. The drive towards a Die-Free Package Cost (DFPC) reduction has led the authors to study the used of a thin leadframe in a QFN 3D stacked-die. Hence, the work presents basis for the qualification of a thin leadframe design and also to demonstrate the thermal and reliability performance. Finally, an extensive virtual thermal-mechanical prototyping has to be achieved in order to understand the physics of materials during the assembly and reliability testing of a 3D stacked-die package with a thin leadframe. This design rule was found to be developed in order to prevent a die crack occurrence between die and leadframe in the semiconductor package.
How to Cite
Abdullah, S., Abdullah, M. F., Ariffin, A. K. & Jalar, A. (2009). Thermal-Mechanical Analysis of a Different Leadframe Thickness of Semiconductor Package under the Reflow Process . American Journal of Applied Sciences, 6(4), 616-625. https://doi.org/10.3844/ajassp.2009.616.625
© 2020 S. Abdullah, M. F. Abdullah, A. K. Ariffin and A. Jalar. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
- 3D Stacked-die