TY  - JOUR
AU  - Abdullah, S. 
AU  - Abdullah, M. F. 
AU  - Ariffin, A. K. 
AU  - Jalar, A. 
PY  - 2009
TI  - Thermal-Mechanical Analysis of a Different Leadframe Thickness of Semiconductor Package under the Reflow Process 
JF  - American Journal of Applied Sciences
VL  - 6
IS  - 4
DO  - 10.3844/ajassp.2009.616.625
UR  - https://thescipub.com/abstract/ajassp.2009.616.625
AB  - The copper-based leadframe is practically proven effective in the thermal and reliability of a Quad Flat No Lead (QFN) three dimension (3D) stacked-die semiconductor package. Reducing the copper thickness is understood to present various thermal and reliability failure mode and mechanisms, such as die cracking and delamination. However, no in-depth study has been pursued in order to determine the capability of achieving the product requirements in terms of thermal and reliability in a 3D stacked-die package. The drive towards a Die-Free Package Cost (DFPC) reduction has led the authors to study the used of a thin leadframe in a QFN 3D stacked-die. Hence, the work presents basis for the qualification of a thin leadframe design and also to demonstrate the thermal and reliability performance. Finally, an extensive virtual thermal-mechanical prototyping has to be achieved in order to understand the physics of materials during the assembly and reliability testing of a 3D stacked-die package with a thin leadframe. This design rule was found to be developed in order to prevent a die crack occurrence between die and leadframe in the semiconductor package.