TY  - JOUR
AU  - Jianxiu, Su 
AU  - Jiaxi, Du 
AU  - Xiqu, Chen 
AU  - Renke, Kang 
PY  - 2011
TI  - Study on Contact Forms in Wafer Chemical Mechanical Polishing in Nanomachining
JF  - Current Research in Nanotechnology
VL  - 1
IS  - 2
DO  - 10.3844/ajnsp.2010.56.61
UR  - https://thescipub.com/abstract/ajnsp.2010.56.61
AB  - Chemical Mechanical Polishing (CMP) has become the most widely used planarization technology in the semiconductor manufacturing process. Problem statement: Studying the Contact Forms in Wafer Chemical Mechanical Polishing. Approach: A series test on the abrasion behavior and the lubricating behavior was conducted and then the test results were investigated by the abrasion and lubrication theory. Results: By the test results and analysis, it showed that the Material Removal Rate (MRR) was mainly due to the interaction between abrasives and polishing slurry and the main material removal of wafer surfaces was two bodies abrasive wear under chemical interaction. By the Stribeck curves obtained, the lubrication state in CMP interface is belong to the boundary lubrication and the material removal is the process of bringing and removed of the chemical reaction boundary lubricating film on wafer surface constantly. Conclusion: By the analysis results, it was concluded that the contact form between the Wafer and the polishing pad is the solid-solid contact. These results will provide theoretical guide to further understand the material removal mechanism of in wafer CMP.