Research Article Open Access

Study of Electronic Properties of Metal-Insulator-Metal Structures for Fabrication of Cold Cathodes

Hossein Ghaforyan1 and Majid Ebrahimzadeh2
  • 1 Payame Noor University, Iran
  • 2 , Iran
Physics International
Volume 1 No. 2, 2010, 110-114

DOI: https://doi.org/10.3844/pisp.2010.110.114

Submitted On: 21 December 2010 Published On: 12 August 2011

How to Cite: Ghaforyan, H. & Ebrahimzadeh, M. (2010). Study of Electronic Properties of Metal-Insulator-Metal Structures for Fabrication of Cold Cathodes. Physics International, 1(2), 110-114. https://doi.org/10.3844/pisp.2010.110.114

Abstract

Problem statement: The electrical properties of thin film structures consisting of metalinsulator- metal sandwiches are important in electronic devices. Approach: The electrical properties of thin film structures consisting of metal-insulator-metal sandwiches are investigated in this experimental work. Results: We are discussed of the electroformed metal-insulator-metal structures Au-MgF2-Au and comparison with other Au-SiO/CeF3-Au, Cu-CeF3-Cu, Cu-SiO-Cu, Au-CeF3-Au specimens. There explains various properties including electron emission, electroluminescence, memory effects and, the differential negative resistance. The article is based upon experiments which identify the conduction process to be trap-controlled thermally activated tunneling between metal islands produced in the forming process. These devices undergo an electroforming process leading to resistivity decrease of several orders of magnitude along with a negative resistance region in their I-V characteristics. Conclusion/Recommendations: Experimental results show that Cu-SiO-Cu and Au- MgF2-Au Mg specimens have high circulating current at room temperature and can be implication for the production of commercial electroformed devices such as cold cathode.

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Keywords

  • Thin film
  • cold cathodes
  • electroforming process
  • emission current