Optoelectronic Characterisation of Silicon and CIGS Photovoltaic Solar Cells
- 1 Department of Electrical and Computer Engineering, Universidade de Lisboa-Instituto Superior Técnico, Portugal
- 2 Instituto de Telecomunicações, Lisbon, Portugal
- 3 Academia Militar/CINAMIL, Av. Conde Castro Guimarães, Amadora, Portugal
Abstract
Throughout these years, many materials have been subjected to tests and experiments, creating several photovoltaic technologies and generations. In this article, some of these generations are compared, namely silicon and Copper Indium Gallium di-Selenide (CIGS), in order to characterize both materials in an optoelectronic way. Using a 2D solar cell PIN model using COMSOL software, both materials are tested, obtaining the responsivity and the I(P) curves. In addition, experimental tests are also conducted, in order to have real results to compare. Additionally, Scanning Electron Microscopy (SEM) was performed to analyze the morphology of photovoltaics inside layers. The obtained results show that Si solar cells present properties close to those predicted by the 2D model, in opposition to the CIGS. That difference was found to be the amount of generated current and more, gallium concentration has a remarkable effect on the CIGS photovoltaics real performance.
DOI: https://doi.org/10.3844/ajeassp.2024.23.32
Copyright: © 2024 Ricardo A. Marques Lameirinhas, Afonso Ravasco, Catarina Pinho Correia Valério Bernardo and João Paulo N. Torres. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
- 1,042 Views
- 577 Downloads
- 0 Citations
Download
Keywords
- Optoelectronic Devices
- Photovoltaic Technology
- Renewable Energy
- Semiconductors