Research Article Open Access

Highly-Efficient Advanced Thermoelectric Devices from Different Multilayer Thin Films

Satilmis Budak1, Zhigang Xiao1, Barry Johnson1, Jordan Cole1, Mebougna Drabo1, Ashley Tramble2 and Chauncy Casselberry3
  • 1 Alabama A&M University, United States
  • 2 Honeywell FM&T at the National Security Campus in Kansas City, United States
  • 3 Robins AFB, United States


The efficiency of the thermoelectric materials and devices is shown by the dimensionless Figure of merit, ZT. ZT is calculated by multiplying the Seebeck coefficient with square of the electrical conductivity and absolute temperature and dividing it all by the thermal conductivity. Thermoelectric devices were prepared using different multilayered thin film structures in the order of SiO2/SiO2 + Ge/Ge/Sb + Ge/Si/Si + Ge/Ge/Ge + Si by DC/RF Magnetron Sputtering. The prepared thermoelectric devices have been tailored with 5 MeV Si ions bombardment at the different fluences (doses) to form quantum structures in the multilayer thin films to improve the efficiency of the thermoelectric devices. Seebeck coefficients, van der Pauw-four probe resistivity, Hall Effect coefficient, density and mobility have been measured. After the samples were prepared, SEM/EDS data were collected. FIB/SEM images were provided to figure out the cross-section of the fabricated devices. Seebeck coefficients and electrical resistivity results were affected positively if the appropriate ion beam dose was selected.

American Journal of Engineering and Applied Sciences
Volume 9 No. 2, 2016, 356-363


Submitted On: 27 March 2016 Published On: 27 April 2016

How to Cite: Budak, S., Xiao, Z., Johnson, B., Cole, J., Drabo, M., Tramble, A. & Casselberry, C. (2016). Highly-Efficient Advanced Thermoelectric Devices from Different Multilayer Thin Films. American Journal of Engineering and Applied Sciences, 9(2), 356-363.

  • 3 Citations



  • Thermoelectric Materials
  • Figure of Merit
  • Seebeck Coefficient
  • High Energy Ion Beam Bombardment