Research Article Open Access

Low-doping Effects of Nanostructure ZnO: Sn tin films annealed at different temperature in Nitrogen ambient to be applied as an Anti-reflecting coating (ARC)

H. Abdullah1, M. N. Norazia1, S. Shaari1, M. Z. Nuawi1 and N. S. Mohamed Dan1
  • 1 ,
American Journal of Engineering and Applied Sciences
Volume 3 No. 1, 2010, 171-179

DOI: https://doi.org/10.3844/ajeassp.2010.171.179

Submitted On: 28 August 2009 Published On: 31 March 2010

How to Cite: Abdullah, H., Norazia, M. N., Shaari, S., Nuawi, M. Z. & Mohamed Dan, N. S. (2010). Low-doping Effects of Nanostructure ZnO: Sn tin films annealed at different temperature in Nitrogen ambient to be applied as an Anti-reflecting coating (ARC). American Journal of Engineering and Applied Sciences, 3(1), 171-179. https://doi.org/10.3844/ajeassp.2010.171.179

Abstract

Problem statement: The focus of this research is to discover the significant influences of substituting low concentration Sn at Zn-site as an Anti-Reflecting Coating (ARC) for Zn1-xSnxO compound. The effects of tin dopants on the structural and morphology properties of ZnO thin films prepared using the sol-gel method were investigated. Approach: The effects of annealing temperature on the deposited films were also investigated at three different temperatures of 400, 500 and 600°C. The composition of the Zn1-xSnxO sample are x = 0.00, 0.05, 0.10 and 0.15. As a starting material, zinc acetate dehydrate was used; 2-methoxyethanol and mono ethanolamine were used as solvent and stabilizer, respectively. The dopant source was tin chloride. Results: Microstructural and surface morphology of samples were characterized by using Scanning Electron Microscopy (SEM). The crystallinity and defects are studied using X-Ray Diffraction (XRD). Molecular bonding is carried out using Raman spectroscopy and optical study of band gap is investigated using UV-VIS measurement. Conclusion: The value of band gap obtained increased slightly as the concentration of Sn increased. The increment of the band gap is acceptable as a requirement for good anti-reflecting coating element. Therefore these films can be applied on silicon solar cell.

  • 1,548 Views
  • 3,117 Downloads
  • 13 Citations

Download

Keywords

  • Zinc oxide
  • sol-gel method
  • thin films
  • doped Sn
  • annealing