@article {10.3844/ajassp.2004.236.239,
article_type = {journal},
title = {Study of Cutoff Frequency of High Collector Current Density in SiGe Single-Heterojunction Bipolar Transistor},
author = {Khanduri, G. M. and Panwar, B. S.},
volume = {1},
year = {2004},
month = {Sep},
pages = {236-239},
doi = {10.3844/ajassp.2004.236.239},
url = {https://thescipub.com/abstract/ajassp.2004.236.239},
abstract = {The cutoff frequency performance of an NPN Si/SiGe/SiGe Single-heterojunction bipolar transistor (SiGe SHBT) at high collector current densities has been analyzed using a 2-dimensional MEDICI device simulator. A conventional NPN Si/SiGe/Si Double-heterojunction bipolar transistor (SiGe DHBT) having uniform 14%Ge in the base region has been investigated for comparison. The analysis shows the formation of a retarding potential barrier for minority carrier electrons at the basecollector heterojunction of the DHBT structure. Whereas, the base-collector homojunction of the SiGe SHBT structure, having a uniform 14%Ge profile in its base and collector, inhibits the formation of such a retarding potential barrier. The SHBT structure with a base-collector homojunction shows an Improved cutoff frequency at a high collector current density in comparison with conventional SiGe DHBT, which makes it more promising for high speed, scaled down, field-specific applications. 
},
journal = {American Journal of Applied Sciences},
publisher = {Science Publications}
}