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ISSN: 1546-9239 (Print)
ISSN: 1554-3641 (Online)
Research Article Open Access

Design of a Current Sensor for IDDQ Testing of CMOS IC

Mohd Liakot Ali1 and Nurul Huda Khamis1
  • 1 Department of Electrical and Electronic Engineering, Faculty of Engineering, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor, Malaysia

Abstract

This study presents the design of an off-chip current sensor for IDDQ testing of CMOS (Complementary Metal-oxide Semiconductor) ICs (integrated circuit). It provides a linear voltage signal of IDDQ current with a conversion factor of 5 mV/μA without any amplification. A voltage-controlled switch is used to bypass the transient current peaks. It has also been shown that the sensor is capable of detecting IDDQ faults of a circuit at 100 kHz test frequency without degrading its performance.

American Journal of Applied Sciences
Volume 2 No. 3, 2005, 682-687

DOI: https://doi.org/10.3844/ajassp.2005.682.687

Submitted On: 14 November 2005 Published On: 31 March 2005

How to Cite: Ali, M. L. & Khamis, N. H. (2005). Design of a Current Sensor for IDDQ Testing of CMOS IC. American Journal of Applied Sciences, 2(3), 682-687. https://doi.org/10.3844/ajassp.2005.682.687

Open AccessCopyright: © 2005 Mohd Liakot Ali and Nurul Huda Khamis. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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Keywords

  • IDDQ Testing
  • CMOS IC
  • Current Sensor