Physics International

THE STRUCTURE AND MECHANICAL PROPERTIES OF ALUMINA FILM PREPARED BY RF DIODE SPUTTERING

H. Panitchakan and P. Limsuwan

DOI : 10.3844/pisp.2013.73.80

Physics International

Volume 4, Issue 1

Pages 73-80

Abstract

Alumina (Al2O3) films were prepared on Al2O3-TiC substrates by RF diode sputtering. The target sputtering power was varied from 4 to 8 kW. The effects of target sputtering power on the structure and mechanical properties of alumina films were investigated. The results show that the structure of the alumina films deposited at all the target sputtering powers is amorphous. However, under the exposure to the electron beam during the Transmission Electron Microscopy (TEM) measurements, the structure of alumina films becomes crystalline. The hardness and elastic modulus of alumina films were found to increase as the target sputtering power was increased.

Copyright

© 2013 H. Panitchakan and P. Limsuwan. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.