Study of Electronic Properties of Metal-Insulator-Metal Structures for Fabrication of Cold Cathodes
Hossein Ghaforyan and Majid Ebrahimzadeh
DOI : 10.3844/pisp.2010.110.114
Volume 1, Issue 2
Problem statement: The electrical properties of thin film structures consisting of metalinsulator- metal sandwiches are important in electronic devices. Approach: The electrical properties of thin film structures consisting of metal-insulator-metal sandwiches are investigated in this experimental work. Results: We are discussed of the electroformed metal-insulator-metal structures Au-MgF2-Au and comparison with other Au-SiO/CeF3-Au, Cu-CeF3-Cu, Cu-SiO-Cu, Au-CeF3-Au specimens. There explains various properties including electron emission, electroluminescence, memory effects and, the differential negative resistance. The article is based upon experiments which identify the conduction process to be trap-controlled thermally activated tunneling between metal islands produced in the forming process. These devices undergo an electroforming process leading to resistivity decrease of several orders of magnitude along with a negative resistance region in their I-V characteristics. Conclusion/Recommendations: Experimental results show that Cu-SiO-Cu and Au- MgF2-Au Mg specimens have high circulating current at room temperature and can be implication for the production of commercial electroformed devices such as cold cathode.
© 2010 Hossein Ghaforyan and Majid Ebrahimzadeh. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.