Design and Simulation of Novel Gated Integrator for the Heavy ion Beam Monitors System
Djamet Yimga Arnaud, Wembe Tafo Evariste and Essimbi Zobo Bernard
DOI : 10.3844/ajeassp.2017.134.141
American Journal of Engineering and Applied Sciences
Volume 10, Issue 1
In this study, the objective is to realize a Gated Integrator (GI) circuit for silicon strip, Si(Li), CdZnTe and CsI detectors etc. With the development of radioactive ion beam physics, heavy-charged particles like carbon ions have been applied to the treatment of deep-seated inoperable tumors in the therapy terminal of the Heavy ion Research Facility in Lanzhou (HIRFL) located at the Institute of Modern Physics (IMP), Chinese Academy of Sciences (CAS). A high resolution current measurement circuit was developed to monitor the beam current at 1pA range. The circuit consisted of a low current high sensitivity I/V converter and gated integrator in an energy spectroscopy. A low offset voltage precision amplifier and new guarding and shielding techniques were used in the I/V converter circuit which allowed to measure low current. This paper will show a MOS switch configuration which is used to prevent leakage current and novel technique to compensate a charge injection in the reset switch.
© 2017 Djamet Yimga Arnaud, Wembe Tafo Evariste and Essimbi Zobo Bernard. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.