Low-doping Effects of Nanostructure ZnO: Sn tin films annealed at different temperature in Nitrogen ambient to be applied as an Anti-reflecting coating (ARC)
H. Abdullah, M. N. Norazia, S. Shaari, M. Z. Nuawi and N. S. Mohamed Dan
DOI : 10.3844/ajeassp.2010.171.179
American Journal of Engineering and Applied Sciences
Volume 3, Issue 1
Problem statement: The focus of this research is to discover the significant influences of substituting low concentration Sn at Zn-site as an Anti-Reflecting Coating (ARC) for Zn1-xSnxO compound. The effects of tin dopants on the structural and morphology properties of ZnO thin films prepared using the sol-gel method were investigated. Approach: The effects of annealing temperature on the deposited films were also investigated at three different temperatures of 400, 500 and 600°C. The composition of the Zn1-xSnxO sample are x = 0.00, 0.05, 0.10 and 0.15. As a starting material, zinc acetate dehydrate was used; 2-methoxyethanol and mono ethanolamine were used as solvent and stabilizer, respectively. The dopant source was tin chloride. Results: Microstructural and surface morphology of samples were characterized by using Scanning Electron Microscopy (SEM). The crystallinity and defects are studied using X-Ray Diffraction (XRD). Molecular bonding is carried out using Raman spectroscopy and optical study of band gap is investigated using UV-VIS measurement. Conclusion: The value of band gap obtained increased slightly as the concentration of Sn increased. The increment of the band gap is acceptable as a requirement for good anti-reflecting coating element. Therefore these films can be applied on silicon solar cell.
© 2010 H. Abdullah, M. N. Norazia, S. Shaari, M. Z. Nuawi and N. S. Mohamed Dan. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.