CHARACTERISTIC ANALYSIS OF DUAL GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR BY MATHEMATICAL MODELING
C.A. Abdul Nazar and V. Kannan
DOI : 10.3844/ajassp.2014.1193.1200
American Journal of Applied Sciences
Volume 11, Issue 8
In this study, the characteristics of DGMOSFET were obtained using mathematical modeling. The variations of characteristics were analyzed with different conditions into consideration. Different parameters behavior is analyzed, such as Transcapacitance variation with the gate voltage, threshold voltage variation with respect to lateral straggle parameter and temperature, mobile charge density variation is also analyzed and also the drain characteristics of the DGMOSFET. The maximum drain current is obtained as 40 mA. The work is done using SPICE simulation software. The results obtained are in greater coherence with previous theoretical investigations.
© 2014 C.A. Abdul Nazar and V. Kannan. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.