American Journal of Applied Sciences

Stability Analysis of Solar Cell Characteristics Above Room Temperature Using Indium Nitride Based Quantum Dot

Mohd Abdur Rashid, Adawati Yusuf, Md. Abdullah Al Humayun, Abdul Kareem Naser Mahmood Al-Khateeb and Shiro Tamaki

DOI : 10.3844/ajassp.2013.1345.1350

American Journal of Applied Sciences

Volume 10, Issue 11

Pages 1345-1350

Abstract

This study represents the improvement of stability of solar cell characteristics above room temperature. We have analyzed theoretically the temperature dependence of three major characteristics of solar cell using Ge and InN based quantum dot in the active layer of the device structure. Among the major characteristics of solar cell we have investigated the rate of change of open circuit voltage, short circuit current and the output power of solar cell with respect to temperature. Numerical results obtained are compared. The comparison results reveal that the rate of change of open circuit voltage, short circuit current and output power have been reduced significantly using InN based quantum dot in the active layer of the solar cell. Hence the improvement in stability of these characteristics above room temperature has been achieved by using InN based quantum dot in the active layer of the solar cell.

Copyright

© 2013 Mohd Abdur Rashid, Adawati Yusuf, Md. Abdullah Al Humayun, Abdul Kareem Naser Mahmood Al-Khateeb and Shiro Tamaki. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.