Atomic Layer Epitaxial Growth of Gaas on Porous Silicon Substrate
Mohamed Lajnef, Afrah Bardaoui, Isabelle Sagne, Radwan Chtouroua and Hatem Ezzaouia
DOI : 10.3844/ajassp.2008.605.609
American Journal of Applied Sciences
Volume 5, Issue 5
GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD) for different growth temperatures using atomic layer epitaxy (ALE) technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM). The effect of growth temperature is studied using photoluminescence measurements (PL).The photoluminescence spectra revealed a dissymmetry form toward high energies attributed to strain effect resulting from the lattice mismatch between GaAs and porous Si substrate.
© 2008 Mohamed Lajnef, Afrah Bardaoui, Isabelle Sagne, Radwan Chtouroua and Hatem Ezzaouia. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.