American Journal of Applied Sciences

Single-Electron Transistor (SET) Process and Device Simulation Using SYSNOPSYS TCAD Tools

Uda Hashim and Amiza Rasmi

DOI : 10.3844/ajassp.2006.1933.1938

American Journal of Applied Sciences

Volume 3, Issue 7

Pages 1933-1938

Abstract

Simulation of semiconductor device fabrication and operation is important to the design and manufacture of integrated circuits because it provides insights into complex phenomena that cannot obtained through experimentation or simple analytic models. Process and device simulation is commonly using for the design of new very large scale integration (VLSI) devices and processes. Simulation programs serves as exploratory tools in order to gain better understanding of process and device physics. In this research, single-electron transistor (SET) is simulated using Synopsys TCAD simulation tools to improve device performance and reliability or to increase the yield. The Taurus Medici is utilized for SET device simulation and the SET process simulation is utilizing Taurus TSUPREM-4. In addition, the structure of SET device, the capacitance, power, resistance and charging energy of SET device were obtained from these simulations. Ultimately, the SET device is operated at room temperature operation (300K).

Copyright

© 2006 Uda Hashim and Amiza Rasmi. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.