American Journal of Applied Sciences

Residual Defects in Silicon Implanted with Boron and Phosphorous Ions

M. Jadan

DOI : 10.3844/ajassp.2005.877.880

American Journal of Applied Sciences

Volume 2, Issue 4

Pages 877-880

Abstract

Accumulation of radiation defects in Si implanted with B+ or P+ ions, and formation of the residual extended defects (dislocation loops, rod-like defects) in the process of successive thermal treatment have been studied. The anomalies observed in the formation of the extended defects are associated with the elastic stresses in the damaged regions affecting the process of radiation defects clustering.

Copyright

© 2005 M. Jadan. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.